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| BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 -- 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tj 25 C; Tj 175 C VGS = 10 V; Tmb = 25 C; see Figure 1; see Figure 3; Tmb = 25 C; see Figure 2 [1] Min Typ Max 40 75 157 240 Unit V A W mJ drain-source voltage drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup 40 V; RGS = 50 ; VGS = 10 V; avalanche energy Tj(init) = 25 C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 C; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12; see Figure 13 27 nC Static characteristics RDSon drain-source on-state resistance [1] - 4.1 5 m Current is limited by package. NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT428 (SC-63; DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK725R0-40C SC-63; plastic single-ended surface-mounted package (DPAK); 3 leads (one DPAK lead cropped) Version SOT428 BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 2 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 100 C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C; tp 10 s; pulsed; Tmb = 25 C [2] Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 2 [1] [1] Conditions Tj 25 C; Tj 175 C RGS = 20 k Min -20 -55 -55 Max 40 40 20 75 75 490 157 175 175 75 490 240 Unit V V V A A A W C C A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness non-repetitive ID = 75 A; Vsup 40 V; RGS = 50 ; VGS = 10 V; drain-source avalanche Tj(init) = 25 C; unclamped energy repetitive drain-source avalanche energy [1] [2] [3] [4] [5] EDS(AL)R see Figure 4 [3][4] [5] - - J Current is limited by package. Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by average junction temperature of 170 C. Refer to application note AN10273 for further information. BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 3 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET ID (A) 140 120 100 003aac066 120 Pder (%) 80 03na19 80 (1) 60 40 40 20 0 0 50 100 150 Tmb (C) 200 0 0 50 100 150 Tmb (C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac305 103 ID (A) 10 2 Limit RDSon = VDS / ID 10 s 100 s 10 DC 100 ms 1 ms 1 10 ms 10-1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 4 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 102 IAL (A) 10 (2) (1) 003aac068 (3) 1 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.65 Max 0.95 Unit K/W thermal resistance from see Figure 5 junction to mounting base thermal resistance from vertical in still air; mounted on a printed junction to ambient circuit board; minimum foot-print Rth(j-a) - 70 - K/W 1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 0.02 003aac067 10-2 single shot P = tp T tp T t 10 -3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration (c) NXP B.V. 2009. All rights reserved. BUK725R0-40C_1 Product data sheet Rev. 01 -- 23 March 2009 5 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 10; see Figure 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 40 V; VGS = 0 V; Tj = 175 C VDS = 40 V; VGS = 0 V; Tj = 25 C VDS = 0 V; VGS = 20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12; see Figure 13 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD LS total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain voltage reverse recovery time recovered charge measured from drain to centre of die; Tj = 25 C measured from source lead to source bond pad; Tj = 25 C IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 14 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 16 ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 C; see Figure 15 60 12 27 2870 540 350 27 73 82 63 2.5 7.5 3820 650 490 nC nC nC pF pF pF ns ns ns ns nH nH Min 40 36 1 2 Typ 3 0.05 2 2 4.1 Max 4.4 4 500 1 100 100 9.5 5 Unit V V V V V A A nA nA m m Static characteristics Source-drain diode VSD trr Qr 0.85 50 25 1.2 V ns nC BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 6 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 50 ID (A) 40 003aac244 300 ID (A) 200 003aac245 20 10 8 VGS (V) = 7.5 7 6.5 30 20 6 100 5.5 5 Tj = 25 C 10 Tj = 175 C 4.5 0 6 0 0 2 4 VGS (V) 0 2 4 6 8 10 VDS (V) Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aac248 Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 30 003aac249 100 gfs (S) 80 RDSon (m) 20 60 40 10 20 0 0 20 40 ID (A) 60 0 5 10 15 VGS (V) 20 Fig 8. Forward transconductance as a function of drain current; typical values Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 7 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 5 VGS(th) (V) 4 max 03aa32 10-1 ID (A) 10-2 min typ max 03aa35 3 typ 10-3 2 min 10-4 1 10-5 0 -60 10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6 Fig 10. Gate-source threshold voltage as a function of junction temperature 2 a 1.5 03aa27 Fig 11. Sub-threshold drain current as a function of gate-source voltage 16 5.5 RDSon (m) 12 8 5 VGS (V) = 6 7 003aac250 1 8 0.5 10 20 0 -60 4 0 60 120 Tj (C) 180 0 100 200 300 ID (A) 400 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 13. Drain-source on-state resistance as a function of drain current; typical values BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 8 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 60 IS (A) 40 003aac251 10 VGS (V) 8 003aac247 VDS = 32 V 6 4 20 Tj = 175 C Tj = 25 C 2 0 0.0 0 0.5 1.0 VSD (V) 1.5 0 20 40 60 QG (nC) 80 Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 5000 C (pF) 4000 Fig 15. Gate-source voltage as a function of gate charge; typical values 003aac246 Ciss 3000 Coss 2000 Crss 1000 0 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 9 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 17. Package outline SOT428 (DPAK) BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 10 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Release date 20090323 Data sheet status Product data sheet Change notice Supersedes Document ID BUK725R0-40C_1 BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 11 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK725R0-40C_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 23 March 2009 12 of 13 NXP Semiconductors BUK725R0-40C N-channel TrenchMOS standard level FET 11. Contents 3 2 1 1.1 1.2 1.3 1.4 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 March 2009 Document identifier: BUK725R0-40C_1 |
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